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Rhenium chalcohalide cluster compounds are a photoluminescent family of mixed-anion chalcohalide cluster materials. Here we report the new material Rb6Re6S8I8, which crystallizes in the cubic space group Fm m and contains isolated [Re6S8I6]4− clusters. Rb6Re6S8I8 has a band gap of 2.06(5) eV and an ionization energy of 5.51(3) eV, and exhibits broad photoluminescence (PL) ranging from 1.01 eV to 2.12 eV. The room-temperature PL exhibits a PL quantum yield of 42.7% and a PL lifetime of 77 μs (99 μs at 77 K). Rb6Re6S8I8 is found to be soluble in multiple polar solvents including N,N-dimethylformamide, which enables solution processing of the material into films with thickness under 150 nm. Light-emitting diodes based on films of Rb6Re6S8I8 were fabricated, demonstrating the potential for this family of materials in optoelectronic devices. 

Subchalcogenides are uncommon, and their chemical bonding results from an interplay between metal–metal and metal–chalcogenide interactions. Herein, we present Ir 6 In 32 S 21 , a novel semiconducting subchalcogenide compound that crystallizes in a new structure type in the polar P 31 m space group, with unit cell parameters a = 13.9378(12) Å, c = 8.2316(8) Å, α = β = 90°, γ = 120°. The compound has a large band gap of 1.48(2) eV, and photoemission and Kelvin probe measurements corroborate this semiconducting behavior with a valence band maximum (VBM) of −4.95(5) eV, conduction band minimum of −3.47(5) eV, and a photoresponse shift of the Fermi level by ∼0.2 eV in the presence of white light. X-ray absorption spectroscopy shows absorption edges for In and Ir do not indicate clear oxidation states, suggesting that the numerous coordination environments of Ir 6 In 32 S 21 make such assignments ambiguous. Electronic structure calculations confirm the semiconducting character with a nearly direct band gap, and electron localization function (ELF) analysis suggests that the origin of the gap is the result of electron transfer from the In atoms to the S 3p and Ir 5d orbitals. DFT calculations indicate that the average hole effective masses near the VBM (1.19 m e ) are substantially smaller than the average electron masses near the CBM (2.51 m e ), an unusual feature for most semiconductors. The crystal and electronic structure of Ir 6 In 32 S 21 , along with spectroscopic data, suggest that it is neither a true intermetallic nor a classical semiconductor, but somewhere in between those two extremes.